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PIMZ2; PUMZ2
NPN/PNP general-purpose double transistors
Rev. 05 -- 24 November 2004 Product data sheet
1. Product profile
1.1 General description
NPN/PNP general-purpose double transistors.
Table 1: Product overview Package Philips PIMZ2 PUMZ2 SOT457 SOT363 JEITA SC-74 SC-88 NPN/PNP double transistors NPN/PNP double transistors Configuration
Type number
1.2 Features
s Simplified circuit design s Reduced component count s Reduced pick and place costs.
1.3 Applications
s General-purpose switching and amplification.
1.4 Quick reference data
Table 2: Symbol VCEO IC Quick reference data Parameter collector-emitter voltage collector current (DC) Conditions open base Min Typ Max 50 150 Unit V mA
Philips Semiconductors
PIMZ2; PUMZ2
NPN/PNP general-purpose double transistors
2. Pinning information
Table 3: Pin 1 2 3 4 5 6 Pinning Description collector TR2 emitter TR2 collector TR1 emitter TR1 base TR1 base TR2
1 2 3
SOT457
Simplified outline
Symbol
PIMZ2 (SOT457)
6 5 4
6 5 4
TR1 TR2 1 2 3
sym082
PUMZ2 (SOT363) 1 2 3 4 5 6 emitter TR1 base TR1 base TR2 collector TR2 emitter TR2 collector TR1
1 2 3
SOT363
6
5
4
6
5 TR2
4
TR1
1
2
3
sym083
3. Ordering information
Table 4: Ordering information Package Name PIMZ2 PUMZ2 SC-74 SC-88 Description plastic surface mounted package; 6 leads plastic surface mounted package; 6 leads Version SOT457 SOT363 Type number
4. Marking
Table 5: PIMZ2 PUMZ2
[1] * = -: made in Hong Kong * = t: made in Malaysia * = W: made in China
Marking codes Marking code [1] M6 GZ*
Type number
9397 750 13966
(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 05 -- 24 November 2004
2 of 9
Philips Semiconductors
PIMZ2; PUMZ2
NPN/PNP general-purpose double transistors
5. Limiting values
Table 6: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM IBM Ptot Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation SOT457 SOT363 Tstg Tj Tamb Per device Ptot total power dissipation SOT457 SOT363
[1] Device mounted on an FR4 printed-circuit board.
Conditions open emitter open base open collector
Min -
Max 60 50 7 150 200 100 200 180 +150 150 +150
Unit V V V mA mA mA mW mW C C C
Per transistor; for the PNP transistor with negative polarity
Tamb 25 C
[1] [1]
-65 -65
storage temperature junction temperature ambient temperature Tamb 25 C
[1] [1]
-
300 300
mW mW
6. Thermal characteristics
Table 7: Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient SOT457 SOT363 Per device Rth(j-a) thermal resistance from junction to ambient SOT457 SOT363
[1] Device mounted on an FR4 printed-circuit board.
Conditions Tamb 25 C
[1] [1]
Min
Typ
Max
Unit
Per transistor
-
-
625 694
K/W K/W
Tamb 25 C
[1] [1]
-
-
417 417
K/W K/W
9397 750 13966
(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 05 -- 24 November 2004
3 of 9
Philips Semiconductors
PIMZ2; PUMZ2
NPN/PNP general-purpose double transistors
7. Characteristics
Table 8: Characteristics Tamb = 25 C unless otherwise specified. Symbol Parameter ICBO IEBO hFE VCEsat fT Cc VCEsat fT Cc Conditions Min 120 100 Typ 250 190 2.3 Max 100 50 100 560 -500 5 250 3 mV MHz pF mV MHz pF Unit nA A nA Per transistor; for the PNP transistor with negative polarity; unless otherwise specified collector-base cut-off current VCB = 60 V; IE = 0 A VCB = 60 V; IE = 0 A; Tj = 150 C emitter-base cut-off current DC current gain collector-emitter saturation voltage transition frequency collector capacitance collector-emitter saturation voltage transition frequency collector capacitance VEB = 7 V; IC = 0 A VCE = 6 V; IC = 1 mA IC = -50 mA; IB = -5 mA IE = -2 mA; VCE = -12 V; f = 100 MHz IE = ie = 0 A; VCB = -12 V; f = 1 MHz IC = 50 mA; IB = 5 mA IE = 2 mA; VCE = 12 V; f = 100 MHz IE = ie = 0 A; VCB = 12 V; f = 1 MHz
TR1 (PNP)
TR2 (NPN)
9397 750 13966
(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 05 -- 24 November 2004
4 of 9
Philips Semiconductors
PIMZ2; PUMZ2
NPN/PNP general-purpose double transistors
8. Package outline
Plastic surface mounted package; 6 leads SOT457
D
B
E
A
X
y
HE
vMA
6
5
4
Q
pin 1 index
A A1 c
1
2
3
Lp
e
bp
wM B detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 0.1 0.013 bp 0.40 0.25 c 0.26 0.10 D 3.1 2.7 E 1.7 1.3 e 0.95 HE 3.0 2.5 Lp 0.6 0.2 Q 0.33 0.23 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT457
REFERENCES IEC JEDEC JEITA SC-74
EUROPEAN PROJECTION
ISSUE DATE 01-05-04 04-11-08
Fig 1. Package outline SOT457 (SC-74)
9397 750 13966 (c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 05 -- 24 November 2004
5 of 9
Philips Semiconductors
PIMZ2; PUMZ2
NPN/PNP general-purpose double transistors
Plastic surface mounted package; 6 leads
SOT363
D
B
E
A
X
y
HE
vMA
6
5
4
Q
pin 1 index
A
A1
1
e1 e
2
bp
3
wM B detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.30 0.20 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.25 0.15 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT363
REFERENCES IEC JEDEC JEITA SC-88
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 04-11-08
Fig 2. Package outline SOT363 (SC-88)
9397 750 13966 (c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 05 -- 24 November 2004
6 of 9
Philips Semiconductors
PIMZ2; PUMZ2
NPN/PNP general-purpose double transistors
9. Revision history
Table 9: Revision history Release date 20041124 Data sheet status Product data sheet Change notice Doc. number 9397 750 13966 Supersedes PIMZ2_PUMZ2_4 Document ID PIMZ2_PUMZ2_5 Modifications:
* * *
The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors. Table 3 PUMZ2 symbol drawing amended Table 5 PIMZ2 marking code and PUMZ2 table note amended Product specification Product specification Objective specification 9397 750 12385 9397 750 11659 9397 750 11456 PIMZ2_2 PIMZ2_1 -
PIMZ2_PUMZ2_4 PIMZ2_2 PIMZ2_1
20031217 20030714 20030602
9397 750 13966
(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 05 -- 24 November 2004
7 of 9
Philips Semiconductors
PIMZ2; PUMZ2
NPN/PNP general-purpose double transistors
10. Data sheet status
Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
III
Product data
Production
[1] [2] [3]
Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
11. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
12. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
13. Contact information
For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 13966
(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 05 -- 24 November 2004
8 of 9
Philips Semiconductors
PIMZ2; PUMZ2
NPN/PNP general-purpose double transistors
14. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . General description. . . . . . . . . . . . . . . . . . . . . . Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . Quick reference data. . . . . . . . . . . . . . . . . . . . . Pinning information . . . . . . . . . . . . . . . . . . . . . . Ordering information . . . . . . . . . . . . . . . . . . . . . Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . Thermal characteristics. . . . . . . . . . . . . . . . . . . Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . Package outline . . . . . . . . . . . . . . . . . . . . . . . . . Revision history . . . . . . . . . . . . . . . . . . . . . . . . . Data sheet status . . . . . . . . . . . . . . . . . . . . . . . . Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Contact information . . . . . . . . . . . . . . . . . . . . . 1 1 1 1 1 2 2 2 3 3 4 5 7 8 8 8 8
(c) Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 24 November 2004 Document number: 9397 750 13966
Published in The Netherlands

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